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Preliminary Technical Information
TrenchMV TM IXTC220N055T
Power MOSFET
(Electrically Isolated Back Surface)
N-Channel Enhancement Mode
Avalanche Rated
V DSS
I D25
R DS(on)
= 55 V
= 130 A
≤ 4.4 m Ω
Symbol
Test Conditions
Maximum Ratings
ISOPLUS220 (IXTC)
V DSS
V DGR
V GSM
T J = 25 ° C to 175 ° C
T J = 25 ° C to 175 ° C; R GS = 1 M Ω
Transient
55
55
± 20
V
V
V
E153432
I D25
I LRMS
I DM
T C = 25 ° C
Package Current Limit, RMS
T C = 25 ° C, pulse width limited by T JM
130
75
600
A
A
A
G
D
S
Isolated back surface
I AR
E AS
dv/dt
T C = 25 ° C
T C = 25 ° C
I S ≤ I DM , di/dt ≤ 100 A/ μ s, V DD ≤ V DSS
25
500
3
A
mJ
V/ns
G = Gate
S = Source
D = Drain
P D
T J
T JM
T stg
T L
T SOLD
V ISOL
F C
Weight
T J ≤ 175 ° C, R G = 5 Ω
T C = 25 ° C
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 seconds
50/60 Hz, t = 1 minute, I ISOL < 1 mA, RMS
Mounting force
150
-55 ... +175
175
-55 ... +175
300
260
2500
11..65/2.5..15
2
W
° C
° C
° C
° C
° C
V
N/lb.
g
Features
Ultra-low On Resistance
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
175 ° C Operating Temperature
Advantages
Easy to mount
Space savings
High power density
Applications
Automotive
- Motor Drives
Symbol Test Conditions
(T J = 25 ° C unless otherwise specified)
BV DSS V GS = 0 V, I D = 250 μ A
Characteristic Values
Min. Typ. Max.
55 V
- High Side Switch
- 12V Battery
- ABS Systems
DC/DC Converters and Off-line UPS
V GS(th)
V DS = V GS , I D = 250 μ A
2.0
4.0
V
Primary- Side Switch
High Current Switching
I GSS
V GS = ± 20 V, V DS = 0 V
± 200 nA
Applications
I DSS
R DS(on)
V DS = V DSS
V GS = 0 V
V GS = 10 V, I D = 25 A, Note 1
T J = 150 ° C
3.4
5 μ A
250 μ A
4.4 m Ω
DS99674(11/06)
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